THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
BDX65
BDX65A
BDX65B
BDX65C
Value
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
Min Typ Mx Unit
60
80
100
120
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
CEO(SUS)
Collector-Emitter
Breakdown Voltage (*)
I
C
=0.1 A, I
B
=0, L=25mH
V
I
CEO
Collector Cutoff Current
V
CE
=30 V
V
CE
=40 V
V
CE
=50 V
V
CE
=60 V
V
BE
=5 V
V
CBO
=60 V
V
CBO
=40 V
T
CASE
=200°C
V
CBO
=50 V
V
CBO
=80 V
T
CASE
=200°C
V
CBO
=100 V
V
CBO
=60 V
T
CASE
=200°C
V
CBO
=120 V
V
CBO
=70 V
T
CASE
=200°
1
mA
I
EBO
Emitter Cutoff Current
5.0
0.4
3
0.4
3
0.4
3
0.4
3
mA
I
CBO
Collector-Base Cutoff
Current
-
BDX65C
-
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=5.0 A, I
B
=20 mA
V
F
Forward Voltage (pulse
method)
I
F
=3 A
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
-
-
2
V
-
1.8
-
V
Page 2 of 4
COMSET [ COMSET SEMICONDUCTOR ]
