THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
BDX64
BDX64A
BDX64B
BDX64C
Value
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BDX64
BDX64A
BDX64B
BDX64C
BDX64
BDX64A
BDX64B
BDX64C
BDX64
BDX64A
BDX64B
BDX64C
BDX64
BDX64A
BDX64B
Min Typ Mx Unit
-60
-80
-100
-120
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
CEO(SUS)
Collector-Emitter
Breakdown Voltage (*)
I
C
=-0.1 A, I
B
=0, L=25mH
V
I
CEO
Collector Cutoff Current
V
CE
=-30 V
V
CE
=-40 V
V
CE
=-50 V
V
CE
=-60 V
V
BE
=-5 V
V
CBO
=-60 V
V
CBO
=-40 V
T
CASE
=200°C
V
CBO
=-80 V
V
CBO
=-50 V
T
CASE
=200°C
V
CBO
=-100 V
V
CBO
=-60 V
T
CASE
=200°C
V
CBO
=-120 V
V
CBO
=-70 V
T
CASE
=200°
-1.0
mA
I
EBO
Emitter Cutoff Current
-5.0
0.2
2
0.2
2
0.2
2
0.2
2
mA
I
CBO
Collector-Base Cutoff
Current
-
BDX64C
-
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=-5.0 A, I
B
=-20 mA
V
F
Forward Voltage (pulse
method)
I
F
=5 A
BDX64
BDX64A
BDX64B
BDX64C
BDX64
BDX64A
BDX64B
BDX64C
-
-
-2
V
-
1.8
-
V
Page 2 of 4
COMSET [ COMSET SEMICONDUCTOR ]
