BDX64 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter Breakdown
Voltage (*)
Test Condition(s)
I
C
=-0.1 A
I
B
=0
L=25mH
V
CE
=-30 V
V
CE
=-40 V
V
CE
=-50 V
V
CE
=-60 V
V
BE
=-5 V
V
CBO
=-60 V
V
CBO
=-40 V
T
CASE
=200°C
V
CBO
=-80 V
V
CBO
=-50 V
T
CASE
=200°C
V
CBO
=-100 V
V
CBO
=-60 V
T
CASE
=200°C
V
CBO
=-120 V
V
CBO
=-70 V
T
CASE
=200°
BDX64C
BDX64B
BDX64
BDX64
BDX64A
BDX64B
BDX64C
BDX64
BDX64A
BDX64B
BDX64C
BDX64
BDX64A
BDX64B
BDX64C
Min
-60
-80
-100
-120
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-
-1.0
Unit
V
CEO(SUS)
V
I
CEO
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
-5.0
0.2
2
0.2
2
mA
BDX64A
-
-
-
-
-
BDX64
BDX64A
BDX64B
BDX64C
BDX64
BDX64A
BDX64B
BDX64C
BDX64
BDX64A
BDX64B
BDX64C
-
0.2
2
0.2
2
I
CBO
Collector-Base Cutoff Current
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=-5.0 A
I
B
=-20 mA
-
-2
V
V
F
Forward Voltage (pulse
method)
I
F
=5 A
-
1.8
-
V
V
BE
Base-Emitter Voltage (*)
I
C
=-5.0 A
V
CE
=-3V
-
-
-2.5
V
24/10/2012
COMSET SEMICONDUCTORS
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