BDX62 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter Breakdown
Voltage (*)
Test Condition(s)
I
C
=-0.1 A
I
B
=0
L=25mH
V
CE
=-30 V
V
CE
=-40 V
V
CE
=-50 V
V
CE
=-60 V
V
BE
=-5 V
V
CBO
=-60 V
V
CBO
=-40 V
T
CASE
=200°C
V
CBO
=-80 V
V
CBO
=-50 V
T
CASE
=200°C
V
CBO
=-100 V
V
CBO
=-60 V
T
CASE
=200°C
V
CBO
=-120 V
V
CBO
=-70 V
T
CASE
=200°
BDX62C
BDX62B
BDX62
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
Min
-60
-80
-100
-120
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-
-0.5
Unit
V
CEO(SUS)
V
I
CEO
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
-5.0
-0.2
-2
-0.2
-2
mA
BDX62A
-
-
-
-
-
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
-
-0.2
-2
-0.2
-2
I
CBO
Collector-Base Cutoff Current
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=-3.0 A
I
B
=-12 mA
-
-2
V
V
F
Forward Voltage (pulse
method)
I
F
=3 A
-
-
-2.5
V
V
BE
Base-Emitter Voltage (*)
I
C
=-3.0 A
V
CE
=-3V
-
-
-
V
24/10/2012
COMSET SEMICONDUCTORS
2|4
COMSET [ COMSET SEMICONDUCTOR ]
