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BDX42 参数 Datasheet PDF下载

BDX42图片预览
型号: BDX42
PDF下载: 下载PDF文件 查看货源
内容描述: 硅平面达林顿晶体管 [SILICON PLANAR DARLINGTON TRANSISTORS]
分类和应用: 晶体晶体管达林顿晶体管局域网
文件页数/大小: 3 页 / 193 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号BDX42的Datasheet PDF文件第1页浏览型号BDX42的Datasheet PDF文件第3页  
NPN BDX42 – BDX43– BDX44
PNP BDX45 – BDX46 – BDX47
THERMAL CHARACTERISTICS
Symbol
R
thJ-a
R
thJ-mb
Ratings
BDX42
Thermal Resistance, Junction to Ambient
BDX43
BDX44
BDX42
Thermal Resistance, Junction to
BDX43
Mounting base
BDX44
Value
100
Unit
K/W
10
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CES
I
EBO
Ratings
Collector cut-off current
Test Condition(s)
V
BE
= 0 ; V
CE
= 45V
V
BE
= 0 ; V
CE
= 60V
V
BE
= 0 ; V
CE
= 80V
I
C
=0 ; V
EB
= 4V
Min Typ Mx Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1000
1000
1000
2000
2000
2000
Emitter cut-off current
BDX42
BDX43
BDX44
BDX42
BDX43
BDX44
BDX42
BDX43
BDX44
BDX43
BDX42
BDX44
BDX42
BDX43
BDX44
BDX43
BDX42
BDX44
BDX42
BDX43
BDX44
BDX43
BDX42
BDX44
BDX42
BDX43
BDX44
BDX42
BDX43
BDX44
2/3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
10
10
10
10
10
1.3
1.3
1.3
1.6
1.6
1.6
1.3
1.3
1.3
1.8
1.6
1.6
1.9
1.9
1.9
2.2
2.2
2.2
-
-
-
-
-
-
µA
µA
I
C
=500 m A, I
B
=0.5 mA
I
C
=1.0 A, I
B
=1.0 mA
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=1.0 A, I
B
=4.0 mA
I
C
=500 m A, I
B
=0.5 mA
Tj=150 °C
I
C
=1.0 A, I
B
=1.0 mA
Tj=150 °C
I
C
=1.0 A, I
B
=4.0 mA
Tj=150 °C
I
C
=500 m A, I
B
=0.5 mA
V
V
BE(SAT)
Base-Emitter saturation
Voltage (*)
I
C
=1.0 A, I
B
=1.0 mA
I
C
=1.0 A, I
B
=4.0 mA
V
CE
=10 V, I
C
=150 mA
V
h
FE
DC Current Gain
V
CE
=10 V, I
C
=500 mA
-
COMSET SEMICONDUCTORS