NPN BDX35 – BDX36 – BDX37
THERMAL CHARACTERISTICS
Symbol
R
thJ-mb
Ratings
BDX35
Thermal Resistance, Junction to mouting
BDX36
base
BDX37
BDX35
Thermal Resistance, Junction to ambient
BDX36
infree air
BDX37
Value
5
Unit
K/W
R
thJ-a
100
K/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I
E
=0 ,
V
CB
=80 V
I
E
=0 ,
V
CB
=100 V
I
E
=0 ,
V
CB
=100 V
I
E
=0 ,
V
CB
=80 V , T
j
= 100°C
I
E
=0 ,
V
CB
=100 V,T
j
= 100°C
I
E
=0 ,
V
CB
=100 V,T
j
= 100°C
I
C
=0, V
EB
=4 V
Min Typ Mx Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
45
I
CBO
Collector cut-off current
I
EBO
Emitter cut-offcurrent
I
C
=0, V
EB
=5 V
BDX35
BDX36
BDX37
BDX35
BDX36
BDX37
BDX35
BDX36
BDX37
BDX35
BDX36
BDX37
BDX35
BDX36
BDX37
BDX35
BDX36
BDX37
BDX36
BDX35
BDX36
BDX37
BDX35
BDX37
BDX36
BDX35
BDX36
BDX37
BDX35
BDX36
BDX37
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
130
10
10
10
50
50
50
10
10
10
1
1
1
0,9
0,7
0,9
1,2
-
1,2
1,5
1 ,6
2,0
2,0
2,5
450
-
µA
µA
mA
I
C
=5.0 A, I
B
=500 mA
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=7.0 A, I
B
=700 mA
I
C
=10 A, I
B
=1A
V
V
BE(SAT)
Base-Emitter saturation
Voltage (*)
I
C
=5.0 A, I
B
=500 mA
I
C
=7.0 A, I
B
=700 mA
I
C
=10 A, I
B
=1A
V
h
FE
DC Current Gain (*)
V
CE
=10 V, I
C
=500m A
-
80
*
COMSET SEMICONDUCTORS
2
COMSET [ COMSET SEMICONDUCTOR ]
