BDX20
PNP SILICON TRANSISTORS EPITAXIAL BASE
LF Large Signal Power Amplification
High Current Fast Switching
Thermal Fatigue Inspection
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
CEX
V
EBO
Collector to Base Voltage
#Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Base Current – Continuous
Total Device Dissipation
Junction Temperature
Storage Temperature
V
BE
=1.5 V
Ratings
Value
-60
-140
-160
-7
-10
-7
117
200
-65 to
+200
Unit
V
V
V
V
A
A
Watts
°C
°C
I
C
I
B
P
TOT
T
J
T
S
THERMAL CHARACTERISTICS
Symbol
R
thJC
Ratings
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
COMSET SEMICONDUCTORS
1/2