PNP BDX20
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
V
CEX
I
CEX
I
CBO
I
EBO
h
21E
V
CE(SAT)
V
BE
f
T
Ratings
Collector-Emitter Sustaining
Voltage (*)
Collector-Emitter Breakdown
Voltage (*)
Collector Cutoff Current
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Static Forward Current Transfer
Ratio (*)
Collector-Emitter Saturation
Voltage (*)
Base-Emitter Voltage (*)
Transition Frequency
Test Condition(s)
I
C
=-200 mA, I
B
=0
I
C
=-100 mA, V
BE
=1.5 V
V
CE
=-140 V, V
BE
=1.5 V
V
CE
=-140 V, V
BE
=1.5 V
T
CASE
=150°C
V
CB
=-140 V, I
E
=0
V
BE
=-7.0 V, I
C
=0
I
C
=-3 A, V
CE
=-4 V
I
C
=10 A, V
CE
=-4 V
I
C
=-3 A, I
B
=-0.3 A
I
C
=-10 A, I
B
=-2 A
I
C
=-3 A, V
CE
=-4 V
I
C
=-10 A, V
CE
=-4 V
V
CE
=-10 V, I
C
=-1 A
f=1.0 MHz
Min
-140
-160
-
-
-
-
20
-
-
-
-
-
4
Typ
-
-
-
-
-
-
-
10
-
-
-1.7
-5.7
-
Max
-
-
-1.0
-10
-1.0
-5.0
70
-
-1.0
-5.0
-
-
-
Unit
V
V
mA
mA
mA
-
V
V
MHz
In accordance with JEDEC Registration Data
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
08/11/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
