PNP BDW84 – BDW84A – BDW84B
BDW84C – BDW84D
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
Min
-45
-60
-80
-100
-120
-
Typ
-
-
-
-
-
-
Max
-
-
-
-
-
-1
Unit
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage (*)
I
C
=30 mA
I
B
=0
V
I
CEO
Collector Cutoff Current
I
CBO
Collector Cutoff Current
I
EBO
h
FE
V
CE(SAT)
V
BE(on)
V
EC
t
on
t
off
Emitter Cutoff Current
DC Current Gain (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter Voltage (*)
Parallel Diode Forward
Voltage
Turn-on time
Turn-off time
I
B
=0, V
CE
=-30 V
I
B
=0, V
CE
=-30 V
I
B
=0, V
CE
=-40 V
I
B
=0, V
CE
=-50 V
I
B
=0, V
CE
=-60 V
I
E
= 0, V
CB
=-45 V
I
E
= 0, V
CB
=-60 V
I
E
= 0, V
CB
=-80 V
I
E
= 0, V
CB
=-100 V
I
E
= 0, V
CB
=-120 V
V
CB
=-45 V, I
E
= 0
BDW84
T
case
= 150°C
V
CB
=-60 V, I
E
= 0
BDW84A
T
case
= 150°C
V
CB
=-80 V, I
E
= 0
BDW84B
T
case
= 150°C
V
CB
=-100 V, I
E
= 0
BDW84C
T
case
= 150°C
V
CB
=-120 V, I
E
= 0
BDW84D
T
case
= 150°C
V
EB
=-5.0 V, I
C
=0
I
C
=-6 A , V
CE
=-3.0 V
I
C
=-15 A , V
CE
=-3.0 V
I
C
=-6 A , I
B
=-12 mA
I
C
=-15 A , I
B
=-150 mA
I
C
=-6 A , I
B
=-3 A
I
E
=-15 A , I
E
= 0
IC = -10 A,
IB1 =-IB2=-40 mA
RL=3Ω; VBE(off) = 4.2V
Duty Cycle≤2%
mA
-
-
-0.5
mA
-
-
-5
-
750
100
-
-
-
-
-
-
-
-
-
-
-
-
-
0.9
7
-2
20 K
-
-2.5
-4
-2.5
-3.5
-
-
mA
-
V
V
V
µs
(*) Pulse Duration = 300
µs,
Duty Cycle <= 2%
23/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
