BDV67A, B, C, D
M
Unit
x
-
-
-
2
-
Symbol
h
FE
Ratings
DC Current Gain
Collector-Emitter saturation
Voltage (*)
Test Condition(s)
V
CE
=3 V, I
C
=1 A
V
CE
=3 V, I
C
=10 A
V
CE
=3 V, I
C
=16 A
I
C
=10 A, I
B
=40 mA
Min
-
1000
-
Typ
3000
-
1000
-
V
CE(SAT)
V
BE
Base-Emitter Voltage(1&2)
V
CE
=3 V, I
C
=10 A
V
F
Diode forward voltage
I
F
=10 A
C
c
I
E
=0 A, V
CB
=10V
t
on
Switching times
V
CC
=12V, I
C
=-10 A
I
B1
=-I
B2
=0.04 A
t
off
f
hfe
V
CE
=-3 V, I
C
=-5 A
BDV67A
BDV67B
BDV67C
BDV67D
BDV67A
BDV67B
BDV67C
BDV67D
BDV67A
BDV67B
BDV67C
BDV67D
BDV67A
BDV67B
BDV67C
BDV67D
BDV67A
BDV67B
BDV67C
BDV67D
BDV67A
BDV67B
BDV67C
BDV67D
BDV67A
BDV67B
BDV67C
BDV67D
-
V
-
-
2,5
V
-
-
3
V
-
300
-
pF
-
1
-
µs
-
3.5
-
-
60
-
kHz
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
(1) collector-Emitter voltage limited et V
CEci
= V
rated by an auxiliary circuit
COMSET SEMICONDUCTORS
3/5
COMSET [ COMSET SEMICONDUCTOR ]
