BDV67-A-B-C-D
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
80
100
120
150
-
1000
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3000
-
1000
Mx
Unit
I
CEO
Collector Cutoff
Current
V
CE
= 30 V, I
B
= 0
V
CE
= 40 V, I
B
= 0
V
CE
= 50 V, I
B
= 0
V
CE
= 60 V, I
B
= 0
V
CE
= 75 V, I
B
= 0
I
EBO
Emitter Cutoff Current
V
BE
= 5 V, I
c
= 0
I
CBO
Collector-Base Cutoff
Current
V
CB
= 80 V
V
CB
= 100 V
I
B
= 0
V
CB
= 120 V
T
j
=25°C
V
CB
= 140 V
V
CB
= 160 V
V
CB
= 40 V
V
CB
= 50 V
I
B
= 0
T
j
=150° V
CB
= 60 V
C
V
CB
= 70 V
V
CB
= 80 V
V
CEO
Collector-emitter
I = 30 mA, I
B
= 0
Breakdown Voltage (*)
C
V
CE
= 3 V, I
C
= 1 A
h
FE
DC Current Gain (*)
V
CE
= 3 V, I
C
= 10 A
V
CE
= 3 V, I
C
= 16 A
V
CE(SAT)
Collector-Emitter
saturation Voltage (*)
I
C
= 10 A, I
B
= 40 mA
BDV67
BDV67A
BDV67B
BDV67C
BDV67D
BDV67
BDV67A
BDV67B
BDV67C
BDV67D
BDV67
BDV67A
BDV67B
BDV67C
BDV67D
BDV67
BDV67A
BDV67B
BDV67C
BDV67D
BDV67
BDV67A
BDV67B
BDV67C
BDV67D
BDV67
BDV67A
BDV67B
BDV67C
BDV67D
BDV67
BDV67A
BDV67B
BDV67C
BDV67D
1
mA
5.0
mA
1
mA
4
-
-
-
-
-
-
-
-
V
-
-
-
2
V
26/09/2012
COMSET SEMICONDUCTORS
3/5
COMSET [ COMSET SEMICONDUCTOR ]
