BDV66-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
I
CEO
Collector Cutoff
Current
V
CE
= -40 V, I
B
= 0
V
CE
= -50 V, I
B
= 0
V
CE
= -60 V, I
B
= 0
V
CE
= -70 V, I
B
= 0
V
BE
= -5 V, I
C
= 0
V
CB
= -80 V
V
CB
= -100 V
V
CB
= -120 V
V
CB
= -140 V
V
CB
= -40 V
V
CB
= -50 V
V
CB
= -60 V
V
CB
= -70 V
I
EBO
Emitter Cutoff
Current
I
CBO
Collector Cutoff
Current
I
E
= 0
T
j
=25°C
I
E
= 0
T
j
=150°C
Collector-Emitter
Breakdown Voltage
(*)
V
CEO
I
C
= -100 mA, I
B
= 0
h
FE
DC Current Gain (*)
V
CE
= -3 V, I
C
= -10 A
V
CE(SAT)
Collector-Emitter
saturation Voltage (*) I
C
= -10 A, I
B
= -40 mA
V
BE
Base-Emitter
Voltage(*)
V
CE
= -3 V, I
C
= -10 A
C
OB
Output Capacitance
V
CB
= -10 V, I
E
= 0
f
test
= 1 MHz
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
-
-
-1
mA
-
-
-5
mA
-
-
-1
mA
-
-60
-80
-100
-120
1000
-
-
-
-
-
-
-5
-
-
-
-
V
-
-
-
-2
V
-
-
-2,5
V
-
300
-
pF
26/09/2012
COMSET SEMICONDUCTORS
3/4
COMSET [ COMSET SEMICONDUCTOR ]
