BDV65-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
V
CE
= 30 V, I
B
= 0
V
CE
= 40 V, I
B
= 0
V
CE
= 50 V, I
B
= 0
V
CE
= 60 V, I
B
= 0
V
BE
= 5 V, I
C
= 0
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
V
CB
= 30 V
V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
Min
Typ
Mx
Unit
I
CEO
Collector Cutoff
Current
-
-
2
mA
I
EBO
Emitter Cutoff Current
-
-
5
mA
I
CBO
Collector Cutoff
Current
I
E
= 0
T
j
=25°C
-
-
0.4
mA
I
E
= 0
T
j
=150°C
-
60
80
100
120
1000
-
-
-
-
-
-
2
-
-
-
-
V
V
CEO
Collector-Emitter
I = 30 mA, I
B
= 0
Breakdown Voltage (*)
C
h
FE
DC Current Gain (*)
V
CE
= 4 V, I
C
= 5 A
-
V
CE(SAT)
Collector-Emitter
saturation Voltage (*)
I
C
= 5 A, I
B
= 20 mA
-
-
2
V
V
BE
Base-Emitter
Voltage(*)
V
CE
= 4 V, I
C
= 5 A
-
-
2,5
V
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
1.5 %
26/09/2012
COMSET SEMICONDUCTORS
3/4
COMSET [ COMSET SEMICONDUCTOR ]
