PNP BDT82 – BDT84 – BDT86 – BDT88
NPN BDT81 – BDT83 – BDT85 – BDT87
Symbol
T
J
Junction Temperature
Ratings
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
Value
150
Unit
°C
T
Stg
Storage Temperature
-65 to +150
°C
THERMAL CHARACTERISTICS
Symbol
R
thJa
R
thJmb
Ratings
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Mounting Base
Value
70
1
Unit
K/W
K/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
-I
CB0
Ratings
Collector Cutoff Current
Test Condition(s)
-I
E
=0A , -
V
CB
=60 V
-I
E
=0A , -
V
CB
=80 V
-I
E
=0A , -
V
CB
=100 V
-I
E
=0A , -
V
CB
=120 V
-V
BE
=0 , -V
CE
= 60V
-V
BE
=0 , -V
CE
= 80V
-V
BE
=0 , -V
CE
= 100V
-V
BE
=0 , -V
CE
= 120V
-V
EB
=7.0 V, -I
C
=0
Min Typ Mx Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
1
1
1
1
0.1
mA
-I
CES
Collector Cutoff Current
-I
EBO
Emitter Cutoff Current
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
mA
mA
-I
C
=50 m A , -V
CE
=10 V
40
-
-
-
H
FE
DC Current Gain (1)
-I
C
=5 A , -V
CE
=4.0 V
40
-
-
-I
C
=5 A , -I
B
=0.5 A
-
-
1
V
-V
CE(SAT)
Collector-Emitter
saturation Voltage (1)
-I
C
=7 A , -I
B
=0.7 A
-
-
1.6
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
