SEMICONDUCTORS
BDT65-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
BE(on)
Base-Emitter Voltage (*)
Ratings
I
C
= 5 A, V
CE
= 4 V
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
Min
-
Typ
-
Max
2.5
Unit
V
I
F
= 5 A
V
ECF
C-E Diode Forward
Voltage
I
F
= 12 A
-
2
V
-
2
-
V
CE
= 4 V, I
C
= 1 A
-
1500
-
h
FE
DC Current Gain (*)
V
CE
= 4 V, I
C
= 5 A
1000
-
-
-
V
CE
= 4 V, I
C
= 12 A
-
1000
-
C
OB
Output Capacitance
I
E
= 0, V
CB
= 10 V
f
test
= 1MHz
-
200
-
pF
SWITCHING TIMES
Symbol
t
on
t
off
Ratings
turn-on time
turn-off time
Test Condition(s)
I
C
= 5 A , V
CC
= 30 V
I
B1
= -I
B2
= 20 mA
Min
-
-
Typ
1
6
Max
2.5
10
Unit
µs
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
26/09/2012
COMSET SEMICONDUCTORS
4|5
COMSET [ COMSET SEMICONDUCTOR ]
