SEMICONDUCTORS
BDT64-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Base-Emitter Voltage
I
C
= -5 A, V
CE
= -4 V
(*)
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
Min
Typ
Max
Unit
V
BE(on)
-
-
-2.5
V
I
F
= -5 A
V
ECF
C-E Diode Forward
Voltage
I
F
= -12 A
-
-2
V
-
-2
-
V
CE
= -4 V, I
C
= -1 A
-
1500
-
h
FE
DC Current Gain (*)
V
CE
= -4 V, I
C
= -5 A
1000
-
-
-
V
CE
= -4 V, I
C
= -12 A
-
750
-
C
OB
Output Capacitance
I
E
= 0, V
CB
= -10 V
f
test
= 1MHz
-
200
-
pF
SWITCHING TIMES
Symbol
t
on
t
off
Ratings
turn-on time
turn-off time
Test Condition(s)
I
C
= -5 A , V
CC
= -30 V
I
B1
= -I
B2
= -20 mA
Min
-
-
Typ
0.5
2.5
Max
2
5
Unit
µs
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
26/09/2012
COMSET SEMICONDUCTORS
4|5
COMSET [ COMSET SEMICONDUCTOR ]
