SEMICONDUCTORS
BDT64-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
I
E
= 0,V
CB
= -V
CBO
max
I
CBO
Collector Cutoff
Current
I
E
= 0,V
CB
= -1/2
V
CBO
max
T
J
= 150 °C
I
E
= 0, V
CE
= -1/2
V
CEO
max
I
CEO
Collector Cutoff
Current
I
EBO
Emitter Cutoff
Current
V
EB
= -5 V, I
C
= 0
V
CEO
Collector-Emitter
I = -30 mA, I
B
= 0
Breakdown Voltage
C
I
C
= -5 A, I
B
= -20 mA
V
CE(SAT)
Collector-Emitter
saturation Voltage
(*)
I
C
= -10 A, I
B
= -100 mA
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
BDT64
BDT64A
BDT64B
BDT64C
-
-
-0.4
mA
-
-
-2
mA
-
-
0.2
mA
-
-60
-80
-100
-120
-
-
-
-
-
-
-
-5
-
-
-
-
-2
mA
V
V
-
-
-3
26/09/2012
COMSET SEMICONDUCTORS
3|5
COMSET [ COMSET SEMICONDUCTOR ]
