SEMICONDUCTORS
BD743 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
Value
Unit
I
C
= 5 A, I
B
= 500 mA
V
CE(SAT)
Collector-Emitter
saturation Voltage
(*)
I
C
= 15 A, I
B
=5 A
-
-
1
V
-
-
3
I
C
= 5 A, V
CE
= 4 V
-
-
1
V
V
BE(on)
Base-Emitter Voltage
(*)
I
C
= 15 A, V
CE
= 4 V
-
-
3
V
I
C
= 1 A, V
CE
= 4 V
40
-
-
h
FE
DC Current Gain (*)
I
C
= 5 A, V
CE
= 4 V
20
-
150
-
I
C
= 15 A, V
CE
= 4 V
5
-
-
SWITCHING TIMES
Symbol
t
d
t
r
t
s
t
f
Ratings
Delay time
Rise time
Storage time
Fall time
Test Condition(s)
Min
I
C
= 5 A, V
be
= -4.2 V
I
B(on)
= -I
B(off)
= 0.5 A
R
L
= 6
Ω,
t
p
= 20µs
-
-
-
-
Value
Typ
20
350
500
400
Unit
Max
-
-
-
-
ns
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
25/09/2012
COMSET SEMICONDUCTORS
3|4
COMSET [ COMSET SEMICONDUCTOR ]
