PNP BD676/A - BD678/A - BD680/A - BD682/A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I
E
=0 , -V
CB
= - 45 V
I
E
=0 , -V
CB
= - 60 V
I
E
=0 , -V
CB
= - 80 V
I
E
=0 , -V
CB
= - 100 V
I
E
=0 , -V
CB
= - 45V, T
j
= 150°C
I
E
=0 , -V
CB
= - 60V, T
j
= 150°C
I
E
=0 , -V
CB
= - 80V, T
j
= 150°C
I
E
=0 , -V
CB
= - 100V
T
j
= 150°C
I
B
=0 , -V
CE
= -½V
CEOMAX
BD676/A
BD678/A
BD680/A
BD682/A
BD676/A
BD678/A
BD680/A
BD682/A
BD676/A
BD678/A
BD680/A
BD682/A
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
45
60
80
100
-
-
-
750
-
750
-
-
10
-
-
0,8
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
V
Max
0,2
0,2
0,2
0,2
2
2
2
2
0,5
0,5
0,5
0,5
5
-
-
-
-
2,5
Unit
-I
CBO
Collector cut-off
current
mA
-I
CEO
Collector cut-off
current
Emitter cut-
offcurrent
mA
-I
EBO
I
C
=0, -V
EB
=5 V
mA
-V
CEO(SUS)
-V
CE(SAT)
h
FE
-V
BE
h
fe
f
hfe
V
F
-I
(SB)
BD676/A
BD678/A
BD680/A
BD682/A
BD676, BD678, BD680, BD682
Collector-Emitter
-I
C
=1.5 A, -I
B
=30 mA
saturation
BD676A, BD678A, BD680A, BD682A
Voltage
-I
C
=2 A, -I
B
=40 mA
BD676, BD678, BD680, BD682
-V
CE
=3 V, -I
C
=500 mA
BD676, BD678, BD680, BD682
-V
CE
=3 V, -I
C
=1,5 A
DC Current Gain
BD676, BD678, BD680, BD682
-V
CE
=3 V, -I
C
=4 A
BD676A, BD678A, BD680A, BD682A
-V
CE
=3 V, -I
C
=2 A
BD676, BD678, BD680, BD682
-V
CE
=3 V, -I
C
=1,5 A
Base-Emitter
Voltage(1&2)
BD676A, BD678A, BD680A, BD682A
-V
CE
=3 V, -I
C
=2 A
Small signal
-V
CE
=3 V, -I
C
=1,5 A, f= 1 MHz
current gain
Ut-off frequency -V
CE
=3 V, -I
C
=1,5 A
Diode forward
I
F
=1,5 A
voltage
Second-
-V
CE
=50 V, t
P
= 20ms,non rep., without
breakdown
heatsink
collector current
Collector-Emitter
sustaning
I
B
=0 , -I
C
=50 mA
Voltage
COMSET SEMICONDUCTORS
V
-
-
2200
-
650
-
-
-
-
60
1,5
-
V
2.8
-
-
-
-
2,5
V
2.5
-
-
-
-
kHz
V
A
2
COMSET [ COMSET SEMICONDUCTOR ]
