SEMICONDUCTORS
BD643/645/647/649/651
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
Min Typ Mx Unit
I
E
=0,V
CB
=V
CEO
MAX
-
-
0.1
mA
I
CBO
Collector Cutoff Current
I
E
=0,V
CB
=1/2 V
CBO
MAX,
T
J
=150°C
-
-
1
mA
I
CEO
Collector Cutoff Current
I
E
=0, V
CE
=1/2 V
CEO
MAX
-
-
0.2
mA
I
EBO
Emitter Cutoff Current
V
EB
=5 V, I
C
=0
-
-
5.0
mA
I
C
=4 A, I
B
=16 mA
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=3 A, I
B
=12 mA
I
C
=5 A, I
B
=50 mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
-
-
-
-
-
2
2
2
2
2.5
2.5
2.5
2.5
2.5
V
V
BE(SAT)
Base-Emitter Saturation
Voltage (*)
I
C
=12 A, I
B
=50 mA
-
-
3
V
Page 3 of 5
COMSET [ COMSET SEMICONDUCTOR ]
