SEMICONDUCTORS
BD644/646/648/650/652
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
Min Typ Mx Unit
-I
E
=0,-V
CB
=-V
CEO
MAX
-
-
0.1
mA
-I
CBO
Collector Cutoff Current
-I
E
=0,-V
CB
=1/2 -V
CBO
MAX,
T
J
=150°C
-
-
1
mA
-I
CEO
Collector Cutoff Current
-I
E
=0, -V
CE
=1/2 -V
CEO
MAX
-
-
0.2
mA
-I
EBO
Emitter Cutoff Current
-V
EB
=5 V, -I
C
=0
-
-
5.0
mA
-I
C
=4 A, -I
B
=16 mA
-V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
-I
C
=3 A, -I
B
=12 mA
-I
C
=5 A, -I
B
=50 mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
-
-
-
-
-
2
2
2
2
2.5
2.5
2.5
2.5
2.5
V
-V
BE(SAT)
Base-Emitter Saturation
Voltage (*)
-I
C
=12 A, -I
B
=50 mA
-
-
3
V
Page 3 of 5
COMSET [ COMSET SEMICONDUCTOR ]
