BD440 – BD442
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
CES
I
EBO
V
CEO(SUS)
V
CE(SAT)
Ratings
Collector cut-off current
Collector cut-off current
Emitter cut-offcurrent
Collector-Emitter
sustaning Voltage (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter Voltage(*)
Test Condition(s)
I
E
= 0, V
CB
= -60 V
I
E
= 0, V
CB
= -80 V
V
BE
= 0, V
CE
= -60 V
V
BE
= 0, V
CE
= -80 V
I
C
= 0
V
EB
= -5 V
I
B
= 0
I
C
= -100 mA
I
C
= -2 A
I
B
= -200 mA
I
C
= -10 mA
V
CE
= -5 V
I
C
= -2 A
V
CE
= -1 V
I
C
= -10 mA
V
CE
= -5 V
I
C
= -500 mA
V
CE
= -1 V
I
C
= -2 A
V
CE
= -1 V
I
C
= -250 mA
V
CE
= -1 V
BD440
BD442
BD440
BD442
BD440
BD442
BD440
BD442
BD440
BD442
BD440
BD442
BD440
BD442
BD440
BD442
BD440
BD442
BD440
BD442
BD440
BD442
Min
-
-
-
-60
-80
-
-
-
20
15
40
25
15
3
Typ
-
-
-
-
-
-
-0.58
-
-
-
-
-
-
-
Max
-100
Unit
µA
-100
-1
-
-
-0.8
-
-1.5
130
130
140
-
-
-
MHz
-
mA
V
V
V
V
V
BE
h
FE
DC Current Gain (*)
f
T
Transition frequency
(*) Measured under pulse conditions :
t
P
<300µs,
δ
<1.5%
25/09/2012
27/08/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
