BD439 – BD441
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
CES
I
EBO
V
CEO(SUS)
V
CE(SAT)
Ratings
Collector cut-off current
Collector cut-off current
Emitter cut-offcurrent
Collector-Emitter
sustaning Voltage (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter Voltage(*)
Test Condition(s)
I
E
= 0, V
CB
= 60 V
I
E
= 0, V
CB
= 80 V
V
BE
= 0, V
CE
= 60 V
V
BE
= 0, V
CE
= 80 V
I
C
= 0
V
EB
= 5 V
I
B
= 0
I
C
= 100 mA
I
C
= 2 A
I
B
= 200 mA
I
C
= 10 mA
V
CE
= 5 V
I
C
= 2 A
V
CE
= 1 V
I
C
= 10 mA
V
CE
= 5 V
I
C
= 500 mA
V
CE
= 1 V
I
C
= 2 A
V
CE
= 1 V
I
C
= 250 mA
V
CE
= 1 V
BD439
BD441
BD439
BD441
BD439
BD441
BD439
BD441
BD439
BD441
BD439
BD441
BD439
BD441
BD439
BD441
BD439
BD441
BD439
BD441
BD439
BD441
Min
-
-
-
60
80
-
-
-
20
15
40
25
15
3
Typ
-
-
-
-
-
-
0.58
-
-
-
-
-
-
-
Max
100
Unit
µA
100
1
-
-
0.8
-
1.5
130
130
140
-
-
-
MHz
-
mA
V
V
V
V
V
BE
h
FE
DC Current Gain (*)
f
T
Transition frequency
(*) Measured under pulse conditions :
t
P
<300µs,
δ
<1.5%
25/09/2012
27/08/2012
COMSET SEMICONDUCTORS
2|2
COMSET [ COMSET SEMICONDUCTOR ]
