NPN BD433 – BD435 – BD437
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector cut-off
current
Collector cut-off
current
Emitter cut-offcurrent
Collector-Emitter
sustaning Voltage (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter
Voltage(*)
Test Condition(s)
I
E
= 0, V
CB
= 22 V
I
E
= 0, V
CB
= 32 V
I
E
= 0, V
CB
= 45 V
V
BE
= 0, V
CE
= 22 V
V
BE
= 0, V
CE
= 32 V
V
BE
= 0, V
CE
= 45 V
I
C
= 0
V
EB
= 5 V
I
B
= 0
I
C
= 100 mA
I
C
= 2 A
I
B
= 200 mA
I
C
= 2 A
V
CE
= 1 V
I
C
= 10 mA
V
CE
= 5 V
BD433
BD435
BD437
BD433
BD435
BD437
BD433
BD435
BD437
BD433
BD435
BD437
BD433
BD435
BD437
BD433
BD435
BD437
BD433
BD435
BD437
BD433
BD435
BD437
BD433
BD435
BD437
BD433
BD435
BD437
Min
Typ
Max
Unit
I
CBO
-
-
100
µA
I
CES
-
-
100
I
EBO
-
22
32
45
-
-
-
-
-
-
1
-
-
-
0.5
0.6
mA
V
CEO(SUS)
V
V
CE(SAT)
V
V
BE
-
-
1.1
1.2
V
40
30
85
50
40
3
-
-
-
-
-
-
130
130
140
-
-
-
MHz
-
h
FE
DC Current Gain (*)
I
C
= 500 mA
V
CE
= 1 V
I
C
= 2 A
V
CE
= 1 V
f
T
1.
Transition frequency
I
C
= 250 mA
V
CE
= 1 V
Measured under pulse conditions :
t
P
<300µs,
δ
<1.5
25/09/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
