SEMICONDUCTORS
BD410
NPN EPITAXILA SILICON POWER TRANSISTORS
They are silicon epitaxial planar NPN power transistors mounted in a TO-126 plastic package.
AF-amplifier for high supply voltage
They are intended for control circuit, vertical output stages in TVsets, and general purpose
applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
T
t
J
t
s
t
L
Collector-Base Voltage
Ratings
Value
500
325
5
1
1.5
T
a
=25°C
T
c
=25°C
1.25
20
-55 to +125
-55 to +125
260
Unit
V
V
V
A
A
W
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Total Power Dissipation
Junction Temperature
Storage Temperature range
Lead Temperature 1.6 mm From Case For 10 Secondes
°C
25/09/2012
05/11/2012
COMSET SEMICONDUCTORS
1/3
COMSET [ COMSET SEMICONDUCTOR ]
