BD246, A, B, C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CES
Ratings
Collector- Emitter
Cut-off Current
V
CE
V
CE
V
CE
V
CE
Test Condition(s)
Min
-
Typ
-
Mx
-0.4
Unit
mA
= -55 V , V
BE
= 0
= -70 V , V
BE
= 0
= -90 V , V
BE
= 0
= -115 V , V
BE
= 0
I
CEO
Collector Cut-off
Current
Emitter Cut-off
Current
Collector- Emitter
Breakdown Voltage
(*)
V
CE
= -30 V , I
B
= 0
V
CE
= -60 V , I
B
= 0
V
E B
= -5 V , I
C
= 0
BD246
BD246A
BD246B
BD246C
BD246
BD246A
BD246B
BD246C
-
-
-0.7
mA
I
EBO
-
BD246
BD246A
BD246B
BD246C
-45
-60
-80
-100
40
20
4
-
-
-
-
20
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-1
-
-
-
-
-
-
-
-1
-4
-1.6
-3
-
mA
V
CEO
I
C
= -30 mA, I
B
= 0
V
h
FE
V
CE(SAT)
V
BE
h
fe
|h
fe
|
V
CE
= -4 V, I
C
= -1 A
DC Current Gain (*) V
CE
= -4 V, I
C
= -3 A
V
CE
= -4 V, I
C
= -10 A
I
C
= -3 A, I
B
= -300 mA
Collector-Emitter
saturation Voltage (*) I
C
= -10 A, I
B
= -2.5 A
V
CE
= -4 V, I
C
= -3 A
Base-Emitter
Voltage(*)
V
CE
= -4 V, I
C
= -10 A
Small Signal forward
V = -10 V, I
C
= -500 mA, f = 1MHz
Current Transfer ratio
CE
Small Signal forward
V = -10 V, I
C
= -500 mA, f = 1MHz
Current Transfer ratio
CE
-
V
V
-
-
RESISTIVE-LOAD-SWITCHING CHARACTERISTICS AT 25°C CASE
TEMPERATURE
Symbol
Ratings
Test Condition(s)
Min
Typ
Mx
Unit
Turn-on Time
t
on
t
off
Turn-off Time
I
C
= -1 A , I
B(on)
= -100 mA , I
B(off)
=
100 mA
V
BE(off)
= 3.7 V , R
L
= 20
Ω ,
t
p
= 20
µs
dc
<
2%
I
C
= -1 A , I
B(on)
= -100 mA , I
B(off)
=
100 mA
V
BE(off)
= 3.7 V , R
L
= 20
Ω ,
t
p
= 20
µs
dc
<
2%
COMSET SEMICONDUCTORS
-
0.2
-
µs
-
0.8
-
25/09/2012
2/3
COMSET [ COMSET SEMICONDUCTOR ]
