PNP BD240 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
V
CE
=-30 V
V
CE
=-30 V
V
CE
=-60 V
V
CE
=-60 V
Min
-
-
-
-
-
-
-
-
-
-
-
-
-45
-60
-80
-100
40
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Max
Unit
I
CEO
I
EBO
I
CES
V
CEO(sus)
h
FE
V
CE(SAT)
V
BE(on)
h
fe
f
T
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
22/10/2012
BD240
BD240A
Collector Cutoff Current
BD240B
BD240C
BD240
BD240A
Emitter Cutoff Current
V
BE
=-5 V
BD240B
BD240C
BD240
V
CE
=-45 V
V
CE
=-60 V
BD240A
Collector Cutoff Current
(V
BE
= 0)
V
CE
=-80 V
BD240B
V
CE
=-100 V
BD240C
BD240
Collector-Emitter
BD240A
Sustaining Voltage
I
C
=-30mA
BD240B
(I
B
= 0) (*)
BD240C
BD240
BD240A
V
CE
=-4 V
I
C
=-0.2 A
BD240B
BD240C
DC Current Gain (*)
BD240
BD240A
V
CE
=-4 V
I
C
=-1 A
BD240B
BD240C
BD240
Collector-Emitter
I
C
=-1 A
BD240A
saturation Voltage (*)
I
B
=-200 mA
BD240B
BD240C
BD240
BD240A
V
CE
=-4 V
Base-Emitter Voltage (*)
I
C
=-1 A
BD240B
BD240C
BD240
V
CE
=10 V
BD240A
I
C
=0.2 A
BD240B
f = 1KHz
BD240C
Small Signal Current Gain
BD240
V
CE
=-10 V
BD240A
I
C
=-0.2 A
BD240B
f = 1MHz
BD240C
Transistor frequency
V
CE
=-10 V, I
C
=-0.2 A, f = 1MHz
-0.3
mA
-1.0
mA
-0.2
mA
V
-
-
-
15
-
-
-
-
0.6
V
-
-
1.3
V
20
-
-
3
3
-
-
-
-
-
MHz
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
