NPN BD239 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
V
CE
=30 V
V
CE
=30 V
V
CE
=60 V
V
CE
=60 V
Min
-
-
-
-
-
-
-
-
-
-
-
-
45
60
80
100
40
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Max
Unit
I
CEO
I
EBO
I
CES
V
CEO(sus)
h
FE
V
CE(SAT)
V
BE(on)
h
fe
f
T
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
22/10/2012
BD239
BD239A
Collector Cutoff Current
BD239B
BD239C
BD239
BD239A
Emitter Cutoff Current
V
BE
=5 V
BD239B
BD239C
BD239
V
CE
=45 V
V
CE
=60 V
BD239A
Collector Cutoff Current
(V
BE
= 0)
V
CE
=80 V
BD239B
V
CE
=100 V
BD239C
BD239
Collector-Emitter
BD239A
Sustaining Voltage (I
B
= 0) I
C
=30mA
BD239B
(*)
BD239C
BD239
BD239A
V
CE
=4 V
I
C
=0.2 A
BD239B
BD239C
DC Current Gain (*)
BD239
BD239A
V
CE
=4 V
I
C
=1 A
BD239B
BD239C
BD239
Collector-Emitter saturation I
C
=1 A
BD239A
Voltage (*)
I
B
=200 mA
BD239B
BD239C
BD239
BD239A
V
CE
=4 V
Base-Emitter Voltage (*)
I
C
=1 A
BD239B
BD239C
BD239
V
CE
=10 V
BD239A
I
C
=0.2 A
BD239B
f = 1KHz
BD239C
Small Signal Current Gain
BD239
V
CE
=10 V
BD239A
I
C
=0.2 A
BD239B
f = 1MHz
BD239C
Transistor frequency
V
CE
=10 V, I
C
=0.2 A, f = 1MHz
0.3
mA
1.0
mA
0.2
mA
V
-
-
-
15
-
-
-
-
0.6
V
-
-
1.3
V
20
-
-
3
3
-
-
-
-
-
MHz
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
