NPN BD201 – BD203
PNP BD202 – BD204
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CEO
I
CBO
I
EBO
V
BE
V
CEK
h
FE
V
CE(SAT)
V
BE(SAT)
Ratings
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Emitter Voltage (1)
Knee Voltage (1)
DC Current Gain (1)
Collector-Emitter saturation
Voltage (1)
Base-Emitter saturation
Voltage (1)
Test Condition(s)
V
CE
=30 V, I
B
=0V
V
CB
=40 V, I
E
=0V, T
j
=150°C
V
BE
=5.0 V, I
C
=0
I
C
=3 A, V
CE
=2.0 V
I
C
=3 A, I
B
= value for which
I
C
=3.3 A at V
CE
=2.0 V
I
C
=3 A, V
CE
=2.0 V
I
C
=2 A, V
CE
=20 V
I
C
=3 A, I
B
=0.3 A
I
C
=6 A, I
B
=0.6 A
I
C
=6 A, I
B
=0.6 A
Min Typ Mx Unit
BD201
BD203
BD201
BD203
BD201
BD203
BD201
BD203
BD201
BD203
BD201
BD203
BD201
BD203
BD201
BD203
BD201
BD203
-
-
-
-
-
30
30
-
-
-
-
-
-
-
1
-
-
-
-
-
0.2
1
0.5
1.5
-
-
-
1
1.5
2
V
mA
mA
mA
V
V
-
Symbol
f
hfe
f
T
I
s/b
h
FE1
/h
FE2
t
on
T
off
Ratings
Cut-off frequency
Transition frequency
Test Condition(s)
I
C
=0.3 A, V
CE
=3.0 V
I
C
=0.3 A, V
CE
=3.0 V
f= 1MHz
Min Typ Mx Unit
BD201
BD203
BD201
BD203
BD201
BD203
BD201
BD203
BD201
BD203
BD201
BD203
25
7
1.5
2.5
-
-
-
-
-
-
-
-
-
-
-
-
1
µs
4
KHz
MHz
A
-
Forward bias second
V
CE
=40 V,t
p
= 0.1 s
T
amb
= 25 °C
breakdown collector current
DC current gain ration of
I
C
=1 A, V
CE
=2.0 V
matched complementary pairs
Turn-on time
Turn-off time
I
Con
=2 A
I
Bon
= -I
Boff
=0.2 A
(1) Pulse conditions : tp < 300
µs, δ
=2%
COMSET SEMICONDUCTORS
3/3
COMSET [ COMSET SEMICONDUCTOR ]
