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BD201_12 参数 Datasheet PDF下载

BD201_12图片预览
型号: BD201_12
PDF下载: 下载PDF文件 查看货源
内容描述: SILCON外延基功率晶体管 [SILCON EPITAXIAL-BASE POWER TRANSISTORS]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 151 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号BD201_12的Datasheet PDF文件第2页浏览型号BD201_12的Datasheet PDF文件第3页  
NPN BD201 – BD203
SILCON EPITAXIAL-BASE POWER TRANSISTORS
The BD201 and BD203 are NPN transistors mounted in Jedec TO-220 plastic package.
They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W
into 4Ω
or 8Ω load.
PNP complements are BD202 and BD204
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CSM
I
B
P
D
T
J
T
Stg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
I
C
I
CM
Collector Current (non-repetitive peak value,t
p
max.2 ms)
Base Current
Total Device Dissipation
@ T
C
= 25°
Junction Temperature
Storage Temperature range
Collector Current
BD201
BD203
BD201
BD203
Value
45
60
60
60
5.0
8
12
25
3
60
150
-65 to +200
Unit
V
V
V
A
A
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-a
R
thJ-mb
Ratings
Thermal Resistance, Junction to mounting base
Thermal Resistance, Junction to ambient in free air
Value
70
2.08
Unit
K/W
K/W
COMSET SEMICONDUCTORS
1/3