BD181 – BD182 – BD183
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BD181
BD182
BD183
BD181
BD182
BD183
BD181
BD182
BD183
BD181
BD182
BD183
BD181
BD182
BD183
BD181
BD182
BD183
BD181
BD182
BD183
Min
-
-
-
-
-
-
45
60
80
-
-
-
55
70
85
15
20
20
20
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
Unit
I
EBO
Emitter-Base Cutoff Current
V
EB
= 7 V, I
C
=0
V
CB
=45 V
T
j
=200°C
V
CB
=60 V
T
j
=200°C
V
CB
=80 V
T
j
=200°C
5.0
2.0
5.0
5.0
-
-
-
1.0
1.0
1.0
-
-
-
-
70
70
70
A
I
CBO
Collector-Base Cutoff
Current
mA
V
CEO(BR)
Collector-Emitter Breakdown
I
C
=200 mA, I
B
=0
Voltage (*)
Collector-Emitter saturation
Voltage (*)
I
C
=3 A, I
B
=0.3 A
I
C
=4 A, I
B
=0.4 A
I
C
=3 A, I
B
=0.3 A
V
V
CE(SAT)
V
V
BR(CER)
Collector-Emitter Breakdown I
C
=200 mA
Voltage (*)
R
BE
=100
Ω
Collector-Emitter Breakdown
V
CE
=4.0 V, I
C
=3.0 A
Voltage (*)
Static forward current
transfer ratio (*)
V
CE
=4.0 V, I
C
=3.0 A
V
CE
=4.0 V, I
C
=4.0 A
V
CE
=4.0 V, I
C
=3.0 A
V
f
hfe
kHz
h
FE
-
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
18/10/2012
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
