BD142
NPN SILICON TRANSISTOR
POWER LINERAR AND SWITCHING APPLICATIONS
LF Large Signal Power Amplification
Low Saturation Voltage
High Dissipation Rating
Intended for a wide variety of intermediate-power applications.
It is especially suited for use in audio and inverter circuits at 12 volts.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
B
P
T
T
J
T
S
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Ratings
Value
45
50
7
50
15
7
117
-65 to +200
Unit
V
V
V
V
A
A
Watts
°C
V
BE
=-1.5 V
@ T
C
= 25°
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(BR)
V
CEX(BR)
V
CE(SAT)
I
CEX
I
EBO
V
BE
I
S/B
h
FE
Ratings
Collector-Emitter Breakdown Voltage (*)
Collector-Emitter Breakdown Voltage (*)
Collector-Emitter Saturation Voltage (*)
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Base-Emitter Voltage (*)
Second Breakdown collector current
Static Forward Current Transfer Ratio (*)
Test Condition(s)
I
C
=200 mA, I
B
=0
I
C
=100 mA, V
BE
=-1.5 V
I
C
=4 A, I
B
=0.4 A
V
CE
= 40 V, V
BE
=-1.5 V
V
EB
=7 V
I
C
=4.0 A, V
CE
=4.0V
t=1s, V
CE
=39 V
V
CE
=4.0 V, I
C
=4.0 A
V
CE
=4.0 V, I
C
=0.5 A
Min
45
50
-
-
-
-
3
12.5
20
Typ
Max
Unit
V
V
V
mA
mA
V
A
-
-
-
-
-
-
-
-
1.1
2
1
1.5
-
160
-
1/2
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
18/10/2012
COMSET SEMICONDUCTORS
COMSET [ COMSET SEMICONDUCTOR ]
