PNP BCY78 – BCY79
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
I
CES
I
CES
I
EBO
V
CEO
V
EBO
V
CE(SAT)
Ratings
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Test Condition(s)
V
CB
=-35 V, V
BE
=0V
V
CB
=-25 V, V
B
=0V
V
CB
=-35 V
V
BE
=0V,T
j
=150°C
V
CB
=-25 V
V
BE
=0V,T
j
=150°C
V
BE
=-4.0 V, I
C
=0
Min Typ
-
-
-
-
-
-
-
-
-0.12
-04
-0.7
-0.85
-0.55
-0.65
-0.68
-0.75
BCY79IX
BCY78IX
>40
Typ.270
>250
<460
>160
<630
>60
>250
<500
Mx
-20
-10
-20
-
-
-
-0.25
-08
Unit
nA
µA
nA
V
V
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
-
-45
-32
-5
-
-
-0.6
-0.7
-
-0.6
-
-
Collector Emitter Breakdown
I
C
=-2 mA, I
B
=0
Voltage
Emitter Base Breakdown
I
E
=-1µA, I
C
=0
Voltage
Collector-Emitter saturation
Voltage
I
C
=-10 mA, I
B
=-0.25 mA
I
C
=-100 mA, I
B
=-2.5 mA
I
C
=-10 mA, I
B
=-0.25 mA
I
C
=-100 mA, I
B
=-2.5 mA
I
C
=-10 µA, V
CE
=-5 V
I
C
=-2 mA, V
CE
=-5 V
V
-0.85
-1.2
-
-0.75
V
-
-
BCY79X
BCY78X
>100
Typ.390
>380
<630
>240
<1000
>60
>350
<700
V
BE(SAT)
Base-Emitter Saturation
Voltage
V
BE
Base-Emitter Voltage
I
C
=-10 mA, V
CE
=-1 V
I
C
=-100 mA, V
CE
=-1 V
I
C
=-10 µA, V
CE
=-5 V
h
FE
DC Current Gain
I
C
=-2 mA, V
CE
=-5 V
I
C
=-10 mA, V
CE
=-1 V
h
fe
Small-Signal
Current Gain
I
C
=-100 mA, V
CE
=-1 V
I
C
=2 mA, V
C E
=5 V
f = 1kHz
BCY79VII
BCY78VII
-
Typ.140
>120
<220
>80
-
>40
>125
<250
BCY79VIII
BCY78VIII
>30
Typ.200
>180
<310
>120
<400
>45
>175
<350
COMSET SEMICONDUCTORS
2/4
COMSET [ COMSET SEMICONDUCTOR ]
