NPN BCY58 – BCY59
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
I
CES
I
CES
I
EBO
V
CEO
V
EBO
V
CE(SAT)
Ratings
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Test Condition(s)
V
CB
=45 V, V
BE
=0V
V
CB
=32 V, V
B
=0V
V
CB
=45 V
V
BE
=0V,T
amb
=150°C
V
CB
=32 V
V
BE
=0V,T
amb
=150°C
V
BE
=5.0 V, I
C
=0
Min Typ
-
-
-
-
-
-
-
-
0.12
04
0.7
0.85
0.5
-
-
0.7
0.76
BCY59IX
BCY58IX
>40
Typ.190
>250
<460
>160
<630
>60
>250
<500
Mx
10
10
10
-
-
-
0.25
08
Unit
nA
µA
nA
V
V
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
-
45
32
7
-
-
0.6
0.7
-
0.2
0.55
-
-
Collector Emitter Breakdown
I
C
=2 mA, I
B
=0
Voltage
Emitter Base Breakdown
I
E
=1µA, I
C
=0
Voltage
Collector-Emitter saturation
Voltage
I
C
=10 mA, I
B
=0.25 mA
I
C
=100 mA, I
B
=2.5 mA
I
C
=10 mA, I
B
=0.25 mA
I
C
=100 mA, I
B
=2.5 mA
I
C
=10 µA, V
CE
=5 V
I
C
=20 µA, V
CE
=V
CE max
T
j
=100°C
V
0.85
1.2
-
-
0.7
-
-
BCY59X
BCY58X
>60
Typ.300
>380
<630
>240
<1000
>60
>350
<700
V
V
BE(SAT)
Base-Emitter Saturation
Voltage
V
BE
Base-Emitter Voltage
I
C
=2 mA, V
CE
=5 V
I
C
=10 mA, V
CE
=1 V
I
C
=100 mA, V
CE
=1 V
I
C
=10 µA, V
CE
=5 V
h
FE
DC Current Gain
I
C
=10 µA, V
CE
=5 V
I
C
=10 mA, V
CE
=1 V
h
fe
Small-Signal
Current Gain
I
C
=100 mA, V
CE
=1 V
I
C
=2 mA, V
CE
=5 V,
f = 1kHz
BCY59VII
BCY58VII
-
Typ.20
>120
<220
>80
-
>40
>125
<250
BCY59VIII
BCY58VIII
>20
Typ.95
>180
<310
>120
<400
>45
>175
<350
COMSET SEMICONDUCTORS
2/4
COMSET [ COMSET SEMICONDUCTOR ]
