NPN BCY58 – BCY59
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specifie
Symbol
I
CES
Ratings
Collector Cutoff
Current
Test Condition(s)
V
CB
=45 V
V
BE
=0V
V
CB
=32 V
V
B
=0V
V
CB
=45 V
V
BE
=0V,T
amb
=150°C
V
CB
=32 V, V
BE
=0
T
amb
=150°C
V
BE
=5.0 VI
C
=0
BCY59
Min
-
Typ
-
Max
10
Unit
nA
BCY58
BCY59
-
BCY58
-
45
32
7
-
-
0.6
0.7
-
0.2
0.55
-
-
BCY59VIII
BCY58VIII
>20
Typ.95
>180
<310
>120
<400
>45
>175
<350
-
-
-
-
0.12
04
0.7
0.85
0.5
-
-
0.7
0.76
10
-
-
-
0.25
08
V
0.85
1.2
-
-
0.7
-
-
V
nA
V
V
-
10
µA
I
CES
Collector Cutoff
Current
Emitter Cutoff
Current
Collector Emitter
Breakdown Voltage
Emitter Base
Breakdown Voltage
I
EBO
V
CEO
V
EBO
V
CE(SAT)
V
BE(SAT)
V
BE
BCY59
BCY58
BCY59
I
C
=2 mA, I
B
=0
BCY58
BCY59
I
E
=1µA, I
C
=0
BCY58
BCY59
I
C
=10 mA
I
B
=0.25 mA
BCY58
Collector-Emitter
saturation Voltage
BCY59
I
C
=100 mA
I
B
=2.5 mA
BCY58
BCY59
I
C
=10 mA
I
B
=0.25 mA
BCY58
Base-Emitter
Saturation Voltage
BCY59
I
C
=100 mA
I
B
=2.5 mA
BCY58
BCY59
I
C
=10 µA, V
CE
=5 V
BCY58
BCY59
V
CE
=V
CE max
I
C
=20 µA, T
j
=100°C BCY58
BCY59
Base-Emitter Voltage I
C
=2 mA, V
CE
=5 V
BCY58
BCY59
I
C
=10 mA, V
CE
=1 V
BCY58
BCY59
I
C
=100 mA, V
CE
=1 V
BCY58
Symbol
Ratings
Test
Condition(s)
I
C
=10 µA, V
CE
=5 V
h
FE
DC Current Gain
I
C
=10 µA, V
CE
=5 V
I
C
=10 mA, V
CE
=1 V
h
fe
Small-Signal
Current Gain
I
C
=100 mA, V
CE
=1V
I
C
=2 mA, V
CE
=5 V,
f = 1kHz
BCY59VII
BCY58VII
-
Typ.20
>120
<220
>80
-
>40
>125
<250
BCY59IX BCY59X
BCY58IX BCY58X
>40
>60
Typ.190 Typ.300
>250
>380
<460
<630
>160
>240
<630
<1000
>60
>60
>250
>350
<500
<700
2/4
18/10/2012
COMSET SEMICONDUCTORS
COMSET [ COMSET SEMICONDUCTOR ]
