PNP BC177 – BC178 – BC179
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
BC177
BC178
BC179
BC177
I
C
=-100 mA
BC178
I
B
=-5 mA
BC179
BC177
I
C
=-10 mA
BC178
I
B
=-0.5 mA
BC179
BC177
I
C
=-100 mA
BC178
I
B
=-5 mA
BC179
BC177
I
C
=-2 mA
BC178
V
CE
=-5 V
BC179
BC177A
BC178A
BC179A
I
C
= -2 mA
V
CE
= 5 V
BC177B
BC178B
BC179B
BC177
I
C
=-10 mA
V
CE
=-5 V
BC178
f = 100 MHz BC179
I
C
= -200 µA BC177
V
CE
=-5 V
BC178
f = 1kHz
R
g
=2kΩ
BC179
B = 200Hz
BC177
I
E
= 0
V
CB
=-10 V
BC178
f = 1MHz
BC179
I
C
=-10 mA
I
B
=-0.5 mA
Min
-
Typ
-0.075
Max
-0.25
Unit
V
CE(SAT)
Collector-Emitter
saturation Voltage
-
-0.2
-
-
-0.72
-0.8
V
V
BE(SAT)
Base-Emitter Saturation
Voltage
-
-0.86
-
V
BE
Base-Emitter Voltage
-0.6
-0.65
-0.75
V
125
-
260
-
h
FE
DC Current Gain (*)
240
-
500
f
T
Transition frequency
-
-
-
-
-
200
-
-
-
5
-
10
10
4
-
MHz
F
Noise figure
db
C
C
Collector capacitance
pF
THERMAL CHARACTERISTICS
Symbol
R
thJ-a
R
thJ-c
Ratings
Thermal Resistance, Junction to mounting base
Thermal Resistance, Junction to ambient in free air
COMSET SEMICONDUCTORS
Value
500
200
Unit
°C/W
°C/W
2|3
18/10/2012
COMSET [ COMSET SEMICONDUCTOR ]
