PNP BC160/10 – BC160/16
PNP BC161/10 – BC161/16
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
-I
CES
-V
CB0
-V
CE0
(*)
-V
EB0
-V
CE(SAT)
(*)
Ratings
Collector – Cutoff Current
Collector – Base Breakdown
Voltage
Collector – Emitter
Breakdown Voltage
Emitter – Base Breakdown
Voltage
Collector-Emitter saturation
Voltage
Base-Emitter Voltage
Test Condition(s)
I
E
= 0 ;V
CES
= 40 V
I
E
= 0 ;V
CES
= 60 V
I
E
= 0 ; V
V
CES
=40 V
T
amb
= 150°c
V
CES
=60 V
Min
-
-
40
60
40
60
5
-
-
-
-
-
-
40
63
100
-
-
-
50
-
-
-
Typ Mx Unit
-
-
-
-
-
-
-
0.1
0.35
0.6
1
110
80
120
140
100
160
26
20
30
-
15
-
-
100
100
-
-
-
-
-
nA
µA
V
V
V
-I
C
= 100 µA
I
E
= 0
-I
C
= 10 mA
I
B
= 0
-I
E
= 100 µA
I
C
= 0
-I
C
= 100 mA , -I
B
= 10 mA
-I
C
= 500 mA , -I
B
= 50 mA
-I
C
= 1 A, -I
B
= 100 mA
-I
C
= 1 A , -V
CE
= 1V
-I
C
= 100 µA , -V
CE
= 1 V
BC160
BC161
BC160
BC161
BC160
BC161
BC160
BC161
BC160
BC161
-V
BE
(*)
Gr 10
Gr 16
Gr 10
Gr 16
Gr 10
Gr 16
h
FE
(*)
DC Current Gain
-I
C
= 100 mA , -V
CE
= 1 V
-I
C
= 1 A , -V
CE
= 1 V
f
T
C
CBO
t
off
t
on
Transition Frequency
Collector – base
Capacitance
Turn-off times
Turn-on times
-I
C
= 50 mA , -V
CE
= 10 V
I
E
= 0 ; -V
CB
= 20V
f = 1 MH
Z
-I
C
=100 mA
-I
B1
=-I
B2
=5 mA
-I
C
=100 Ma
-I
B1
=1 mA
1
1.7
-
-
-
250
160
250
-
-
-
-
30
650
500
V
-
MH
Z
pF
ns
ns
(*) Pulsed : pulse duration = 300µs, duty cycle = 1%
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
