2N6253 - 2N6254 - 2N6371
HIGH POWER SILICON NPN TRANSISTORS
The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide
variety of high-power applications. The construction of these devices renders them
highly resistant to second breakdown over a wide range of operating conditions.
These devices differ in maximum ratings for voltage and power dissipation. All are
supplied in JEDEC TO-3 hermetic steel packages.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO(SUS)
V
CBO
V
CER(SUS)
Collector-Emitter Voltage
Ratings
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
Value
45
80
40
55
100
50
55
85
45
55
90
50
5
7
5
15
7
Unit
V
V
Collector-Base Voltage (*)
Collector-Emitter Voltage
R
BE
=100Ω
Collector-Emitter Voltage
V
BE
=-1.5V
Emitter-Base Voltage
V
V
CEV(SUS)
V
V
EBO
I
C
I
B
V
A
A
Collector Current
Base Current
COMSET SEMICONDUCTORS
1/4
COMSET [ COMSET SEMICONDUCTOR ]
