欢迎访问ic37.com |
会员登录 免费注册
发布采购

2N6285 参数 Datasheet PDF下载

2N6285图片预览
型号: 2N6285
PDF下载: 下载PDF文件 查看货源
内容描述: PNP达林顿功率硅晶体管 [PNP DARLINGTON POWER SILICON TRANSISTOR]
分类和应用: 晶体晶体管开关局域网
文件页数/大小: 3 页 / 80 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号2N6285的Datasheet PDF文件第1页浏览型号2N6285的Datasheet PDF文件第3页  
2N6285 – 2N6286 – 2N6287
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance Junction-Case
Value
1.09
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter
Breakdown Voltage
(*)
Collector Cutoff
Current
Emitter Cutoff
Current
Test Condition(s)
2N6285
I
C
= -200 m A
I
B
= 0
V
CE
= -30 V, I
B
= 0
V
CE
= -40 V, I
B
= 0
V
CE
= -50 V, I
B
= 0
2N6286
2N6287
Min
-60
-80
-100
-
Typ
-
-
-
-
Max
-
-
-
-1
Unit
V
CEO(SUS)
V
I
CEO
I
EBO
I
CEX
Collector Cutoff
Current
V
CE(SAT)
Collector-Emitter
saturation Voltage (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter
saturation Voltage (*)
Base-Emitter Voltage
(*)
V
CE(SAT)
V
BE(SAT)
V
BE
2N6285
2N6286
2N6287
2N6285
V
BE
= -5 V, I
C
= 0
2N6286
2N6287
V
CE
= -60 V, V
BE
= 1.5 V
2N6285
V
CE
= -80 V, V
BE
= 1.5 V
2N6286
V
CE
= -100 V, V
BE
= 1.5 V 2N6287
V
CE
= 60 V, V
BE
= 1.5 V
2N6285
T
C
= 150°C
V
CE
= -80 V, V
BE
= 1.5 V
2N6286
T
C
= 150°C
V
CE
= -100 V, V
BE
= 1.5 V
2N6287
T
C
= 150°C
2N6285
2N6286
I
C
= -10 A, I
B
= -40 mA
2N6287
2N6285
I
C
= -20 A, I
B
= -200 mA
2N6286
2N6287
2N6285
I
C
= -20 A, I
B
= -200 mA
2N6286
2N6287
2N6285
2N6286
V
CE
= -3 V, I
C
= -10 A
2N6287
mA
-
-
-2
mA
-
-
-500
µA
-
-
-5
mA
-
-
-2
V
-
-
-3
V
-
-
-4
V
-
-
-2,8
V
04/12/2012
COMSET SEMICONDUCTORS
2/3