2N6282 – 2N6283 – 2N6284
Symbol
Ratings
Test Condition(s)
V
CE
= 3 V, I
C
= 10 A
h
FE
DC Current Gain (*)
V
CE
= 3 V, I
C
= 20 A
I
E
= 0 A, V
CB
= 10V
f= 1MHz
2N6282
2N6283
2N6284
2N6282
2N6283
2N6284
2N6282
2N6283
2N6284
Min
750
Typ
-
Max
18000
Unit
-
100
-
-
C
OB
Output Capacitance
-
-
400
pF
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
A
B
C
D
F
G
N
P
R
U
V
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
max
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
04/12/2012
COMSET SEMICONDUCTORS
info@comsetsemi.com
3/3
COMSET [ COMSET SEMICONDUCTOR ]
