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2N6249 参数 Datasheet PDF下载

2N6249图片预览
型号: 2N6249
PDF下载: 下载PDF文件 查看货源
内容描述: 高压硅NPN功率晶体管 [HIGH VOLTAGE NPN SILICON POWER TRANSISTORS]
分类和应用: 晶体晶体管高压局域网
文件页数/大小: 3 页 / 371 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号2N6249的Datasheet PDF文件第1页浏览型号2N6249的Datasheet PDF文件第3页  
2N6249 – 2N6250 – 2N6251
2N6249
@ T
C
= 25°
2N6250
2N6251
2N6249
@ T
C
= 100°
2N6250
2N6251
2N6249
Derate
above
25°
2N6250
(1)
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
175
Watts
100
1.0
-65 to +200
-65 to +200
W/°C
°C
°C
P
t
Total Power Dissipation
T
J
T
stg
Junction Temperature (1)
Storage Temperature (1)
(1) This data guaranteed in addition to JEDEC registered data.
THERMAL CHARACTERISTICS
Symbol
R
thJC
T
L
Ratings
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes : 1/8’’ from Case for 5 Secondes
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
Value
1
275
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
Ratings
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Sustaining Voltage
Test Condition(s)
I
C
=200 mAdc, I
B
=0
Min Typ Mx Unit
2N6249
200
2N6250
275
2N6251
350
2N6249
225
2N6250
300
2N6251
375
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5.0
5.0
5.0
5.0
10
5.0
10
5.0
10
mAdc
mAdc
V
Vdc
V
CER(SUS)
I
C
=0.2 Adc,
R
BE
=50Ω
V
CE
=150 Vdc, I
B
=0
I
CEO
Collector-Emitter Current
V
CE
=225 Vdc, I
B
=0
V
CE
=300 Vdc, I
B
=0
V
CE
=225 Vdc, V
EB(off)
=1.5 Vdc
V
CE
=225 Vdc, V
EB(off)
=1.5 Vdc,
T
C
= 150°C
V
CE
=300 Vdc, V
EB(off)
=1.5 Vdc
V
CE
=300 Vdc, V
EB(off)
=1.5 Vdc,
T
C
= 150°C
V
CE
=375 Vdc, V
EB(off)
=1.5 Vdc
V
CE
=375 Vdc, V
EB(off)
=1.5 Vdc,
T
C
= 150°C
I
CEX
Collector Cutoff Current
COMSET SEMICONDUCTORS
2/3