COMPLEMENTARY POWER DARLINGTON
The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and
are mounted in Jedec TO-3 metal case.
They are intended for use in power linear and switching applications.
The complementary NPN type is the 2N6055
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
Ratings
#Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Continuous
I
B
=0
I
E
=0
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
Value
60
60
5.0
8
Unit
V
V
V
I
C
Collector Current
Peak
A
16
120
100
mA
Watts
°C
-65 to +200
°C
I
B
P
TOT
T
J
T
S
Base Current
Total Dissipation
Junction Temperature
Storage Temperature
@ T
C
= 25°
THERMAL CHARACTERISTICS
Symbol
R
thJC
Ratings
Thermal Resistance, Junction to Case
2N6053
2N6055
Value
1.75
Unit
°C/W
1
COMSET [ COMSET SEMICONDUCTOR ]
