2N5681 – 2N5682
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
I
CBO
I
CEO
Ratings
Collector Cutoff
Current
Collector Cutoff
Current
Test Condition(s)
Min
2N5679
2N5680
2N5679
2N5680
2N5679
2N5680
2N5679
-
2N5680
2N5679
2N5680
2N5679
2N5680
2N5679
2N5680
2N5679
2N5680
2N5679
2N5680
2N5679
2N5680
2N5679
2N5680
2N5679
2N5680
2N5679
2N5680
2N5679
2N5680
2N5679
2N5680
-
100
120
-
-
-
-
40
5
30
-
40
-
-
-
Typ
-
-
-
Mx
1
10
1
Unit
µA
µA
µA
I
CEV
Collector Cutoff
Current
V
CB
= 100 V, I
E
= 0
V
CB
= 120 V, I
E
= 0
V
CE
= 70 V, I
B
= 0
V
CE
= 80 V, I
B
= 0
V
CE
= 100 V, V
BE
= -1.5 V
V
CE
= 120 V, V
BE
= -1.5 V
V
CE
= 100 V, V
BE
= -1.5 V
T
C
= 150°C
V
CE
= 120 V, V
BE
= -1.5 V
T
C
= 150°C
-
1
mA
I
EBO
V
CEO(sus)
V
CE(SAT)
V
BE
Emitter Cutoff
V
BE
= 4.0 V, I
C
= 0
Current
Collector Emitter
I = 10 mA, I
B
= 0
Sustaining voltage (*)
C
I
C
= 250 mA
I
B
= 25 mA
I
C
= 500 mA
Collector-Emitter
saturation Voltage (*) I
B
= 50 mA
I
C
= 1 A
I
B
= 200 mA
Base-Emitter Voltage
I
C
= 250 mA, V
CE
= 2 V
(*)
I
C
= 250 mA, V
CE
= 2 V
DC Current Gain (*)
I
C
= 1 A, V
CE
= 2 V
I
C
= 100 mA, V
CE
= 10 V
f = 10 MHz
I
E
= 0, V
CB
= 20 V
f = 1MHz
I
C
= 200 mA, V
CE
= 1.5 V
f = 1 kHz
-
-
-
-
-
-
-
-
-
-
-
-
1
-
-
0.6
1
2
1
150
-
-
50
-
µA
V
V
V
h
FE
f
T
C
OB
h
fe
Transition frequency
Output Capacitance
Small Signal Current
Gain
MHz
pF
-
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
04/09/2012
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
