PNP 2N5322 – 2N5323
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
V
CEO
V
CEV
V
EBO
h
FE
(1)
V
CE(SAT)
(1)
V
BE
(1)
f
T
t
on
t
off
Ratings
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown
Voltage
Collector Emitter Breakdown
Voltage
Emitter Base Breakdown
Voltage
DC Current Gain
Collector-Emitter saturation
Voltage
Base-Emitter Voltage
Transition frequency
Turn-on Time
Turn-off Time
Test Condition(s)
V
CB
= -80 V, I
E
=0
V
CB
= -60 V, I
E
=0
V
EB
= -5 V, I
C
=0
V
EB
= -4 V, I
C
=0
I
C
= -10 mA, I
B
=0
I
C
= -100 µA
V
BE
= 1.5V
I
E
= -100 µA, I
C
=0
I
C
= -500 mA
V
CE
= -4 V
I
C
= -1 A
V
CE
= -2 V
I
C
= -500 mA, I
B
= -50 mA
I
C
= -500 mA, V
CE
= -4 V
I
C
= -50 mA, V
CE
= -4 V
f = 10 MHz
I
C
= -500 mA, V
CC
= -30 V
I
B1
= -50 mA
I
C
= 500 mA, V
CC
= 30 V
I
B1
= -I
B2
= -50 mA
Min Typ
-
-
-
-
-
-0.1
-
-0.5
-75
-
-50
-
-100
-
-75
-
-6
-
-5
-
30
-
40
-
10
-
-
-
-
50
-
-
-
-
-
-
-
-
-
-
Mx
-0.5
-5
-
-
-
-
-
-
-
-
130
250
-
-0.7
-1.2
-1.1
-1.4
-
100
1000
Unit
µA
µA
V
V
V
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
-
V
V
MHz
ns
ns
(1) Pulse conditions : tp < 300
µs, δ
=1%
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
