PNP 2N5322 – 2N5323
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
V
CEO
V
CEV
V
EBO
Ratings
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter
Breakdown Voltage
Collector Emitter
Breakdown Voltage
Emitter Base Breakdown
Voltage
Test Condition(s)
V
CB
= -80 V, I
E
=0
V
CB
= -60 V, I
E
=0
V
EB
= -5 V, I
C
=0
V
EB
= -4 V, I
C
=0
I
C
= -10 mA, I
B
=0
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
2N5322
2N5323
Min
-
-
-
-
-75
-50
-100
-75
-6
-5
30
40
10
-
-
-
-
50
Typ
-
-
-0.1
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-0.5
-5
-
-
-
-
-
-
-
-
130
250
-
-0.7
-1.2
-1.1
-1.4
-
Unit
µA
µA
V
V
V
h
FE
(1)
V
CE(SAT)
(1)
V
BE
(1)
f
T
t
on
t
off
(1) Pulse conditions : tp < 300
µs, δ
=1%
I
C
= -100 µA
V
BE
= 1.5V
I
E
= -100 µA
I
C
=0
I
C
= -500 mA
V
CE
= -4 V
DC Current Gain
I
C
= -1 A
V
CE
= -2 V
Collector-Emitter saturation I
C
= -500 mA
Voltage
I
B
= -50 mA
I
C
= -500 mA
Base-Emitter Voltage
V
CE
= -4 V
I
C
= -50 mA
V
CE
= -4 V
Transition frequency
f = 10 MHz
I
C
= -500 mA
Turn-on Time
V
CC
= -30 V
I
B1
= -50 mA
I
C
= 500 mA
Turn-off Time
V
CC
= 30 V
I
B1
= -I
B2
= -50 mA
-
V
V
MHz
-
-
100
ns
-
-
1000
ns
17/10/2012
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
