NPN 2N3583 – 2N3584 – 2N3585
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter cut-off
current
Test Condition(s)
2N3583
I
B
= 0 ; V
CE
= 150 V
V
BE
= -1.5V ;
V
CE
= 225 V
V
BE
= -1.5V ;
V
CE
= 340 V
V
BE
= -1.5V ;
V
CE
= 450 V
V
BE
= -1.5V ;
V
CE
= 225 V
T
j
= 150°C
V
BE
= -1.5V ;
V
CE
= 300 V
T
j
= 150°C
I
C
= 0 ; V
EB
= 6 V
Min Typ Mx Unit
-
-
-
-
-
-
I
CEO
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3583
2N3584
2N3585
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
2N3584
2N3585
2N3584
2N3585
2N3584
2N3585
10
5
5
1
mA
I
CEX
Collector-Emitter cut-off
current
-
-
-
-
175
250
300
-
-
-
-
40
10
25
25
8
8
350
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
5
0.5
0.5
-
-
-
5
0.75
0.75
1.4
200
-
100
100
80
80
-
mA
I
EBO
V
CEO(SUS)
V
CE(SAT)
V
BE(SAT)
Emitter cut-offcurrent
Collector-Emitter
sustaning Voltage (1)
Collector-Emitter
saturation Voltage (1)
Base-Emitter saturation
Voltage (1)
I
B
= 0 ; I
C
= 200 mA
V
I
C
= 1 A ; I
B
= 125 mA
V
I
C
= 1 A ; I
B
= 100 mA
V
CE
= 10 V ; I
C
= 500 mA
h
FE
DC Current Gain (1)
V
CE
= 10 V ; I
C
= 1 A
V
CE
= 2 V ; I
C
= 1 A
I
S/B
f
T
t
d
+t
r
t
f
t
s
Second Breakdown
Collector current
Transition frequency
Turn-on-time
Fall time
Carrier storage time
V
CE
= 100 V ; t = 1 s
V
CE
= 10 V ; I
C
= 200 mA
f = 5 MHz
I
C
= 1 A ; I
B
= 100 mA
I
C
= 1 A ; I
B
= 100 mA
I
C
= 1 A ; I
B
= 100 mA
10
-
-
-
-
-
-
-
-
3
3
4
MHz
µs
1. Measured under pulse conditions :
t
P
<300µs,
δ
<2%.
COMSET SEMICONDUCTORS
2
COMSET [ COMSET SEMICONDUCTOR ]
