NPN 2N3441
SILICON POWER TRANSISTOR
The 2N3441 are NPN transistors mounted in TO-66 metal package with the collector
connected to the case .
They are intended for use in general purpose switching and amplifier applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
t
T
J
T
Stg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
I
B
= 0
I
E
= 0
I
C
= 0
Value
140
160
7
3
2
25
200
-65 to +200
Unit
V
V
V
A
A
W
°C
°C
@ T
C
= 25°
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
I
CEO
I
CEX
I
EBO
V
CE(SAT)
V
BE(on)
h
FE
Ratings
Collector-Emitter Sustaining
Voltage (*)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter saturation
Voltage (*)
Base-Emitter on Voltage (*)
DC Current Gain
Test Condition(s)
Min
140
-
-
-
-
-
-
25
5
Typ
-
-
-
-
-
-
-
-
-
Max
-
10
5
6
1
6
6.5
100
-
Unit
V
mA
mA
mA
V
V
-
I
C
= 100 mA , I
B
= 0 A
V
CE
= 140 V , I
B
= 0
V
CE
= 140 V , V
BE
= 1.5 V
V
CE
= 140 V , V
BE
= 1.5 V
T
case
= 150°C
V
EB
= 7 V, I
C
= 0 A
I
C
= 2.7 A , I
B
= 900 mA
I
C
= 40 A , I
B
= 4 A
I
C
= 500 mA, V
CE
= 4 V
I
C
= 2.7 A, V
CE
= 4 V
(*) Pulse Duration = 300
µs,
Duty Cycle <= 1.5%
1|2
20/09/2012
COMSET SEMICONDUCTORS
COMSET [ COMSET SEMICONDUCTOR ]
