NPN 2N3227
SILICON ANNULAR TRANSISTORS
The 2N3227 are silicon NPN silicon annular transistors for low-current, high-speed
switching applications.
They are mounted in Jedec TO-18 metal.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
V
CES
I
C (peak)
P
D
P
D
T
J
T
Stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Ratings
Value
40
20
6
40
500
0.36
2.06
1.2
6.85
+200
-65 to +200
Unit
V
V
V
V
mA
Watts
mW/°C
Watts
mW/°C
°C
Collector Current
TOTAL Device Dissipation Ambient Temperature
Derating Factore Above
TOTAL Device Dissipation Case Temperature .
Derating Factore Above
Junction Temperature
Storage Temperature range
@ T
C
25°
@ T
C
25°
=
=
NPN 2N3227
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
CEX
I
BL
BV
CBO
BV
EBO
BV
CEO
BV
CES
Ratings
Collector cut-off current
Collector cut-off curren
Base cut-off curren
Collector-Base Breakdown
voltage
Emitter-Base Breakdown
voltage
Collector-Emitter Breakdown
voltage (1)
Collector-Emitter voltage
Test Condition(s)
I
E
= 0 ; V
CB
= 20V
I
E
= 0 ; V
CB
= 20V ; T
A
= 150°C
V
CE
= 20V ; V
EB(off)
= 3V
V
CE
= 20V ; V
EB(off)
= 3V
I
C
=10 µA ; I
B
= 0
I
E
=10 µA ; I
C
= 0
I
C
= 10 mA
I
C
=10 µA ; I
B
= 0
Min Typ
-
-
-
-
40
6
20
40
-
-
-
-
-
-
-
-
Mx Unit
0.2
50
0.2
0.5
-
-
-
-
µA
V
V
V
V
COMSET SEMICONDUCTORS
1/2
COMSET [ COMSET SEMICONDUCTOR ]
