NPN 2N3227
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
CEX
I
BL
BV
CBO
BV
EBO
BV
CEO
BV
CES
V
CE(SAT)
V
BE(SAT)
Ratings
Collector cut-off current
Collector cut-off curren
Base cut-off curren
Collector-Base Breakdown
voltage
Emitter-Base Breakdown
voltage
Collector-Emitter Breakdown
voltage
Collector-Emitter voltage
Collector-Emitter saturation
Voltage
Test Condition(s)
I
E
= 0 ; V
CB
= 20V
I
E
= 0 ; V
CB
= 20V
T
A
= 150°C
V
CE
= 20V ; V
EB(off)
= 3V
V
CE
= 20V ; V
EB(off)
= 3V
I
C
=10 µA ; I
B
= 0
I
E
=10 µA ; I
C
= 0
I
C
= 10 mA
Min
-
-
-
-
40
6
20
40
-
-
-
-
100
40
30
5
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
0.2
50
0.2
0.5
-
-
-
-
0.25
0.45
0.85
1.4
300
-
-
-
13
18
Unit
µA
V
V
V
V
V
V
h
FE
h
fe
t
S
T
off
t
on
C
ob
C
ib
I
C
=10 µA ; I
B
= 0
I
C
=10 mA, I
B
=1.0 mA
I
C
=100 m A, I
B
=10 mA
I =10 mA, I
B
=1.0 mA
Base-Emitter saturation Voltage
C
I
C
=100 m A, I
B
=10 mA
V
CE
=1.0 V, I
C
=10 mA
V
CE
=1.0 V, I
C
=10 mA
DC Current Gain
T
A
=-55°c
V
CE
=1.0 V, I
C
=100 mA
V
CE
=10 V, I
C
=10 mA
Small Signal Current Gain
f=100MHz
Storage time
I
C
= I
B1
= I
B2
=10 mA
I
C
=10 A;I
B1
= 3 mA;
Turn-off time
I
B2
=1.5 mA;V
CC
=3.0 V
I
C
=10 A;I
B1
= 3 mA
Turn-on time
V
CC
=3.0 V, V
EB(off)
= 1.5
V
V
CB
=5
V;
I
E
=0
,
Output Capacitance
f=140kHz
V
BE
=1
V;
I
C
=0
,
Input Capacitance
f=140kHz
-
-
Ns
12
4.0
4.0
pF
pF
16/10/2012
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
