欢迎访问ic37.com |
会员登录 免费注册
发布采购

2N3054 参数 Datasheet PDF下载

2N3054图片预览
型号: 2N3054
PDF下载: 下载PDF文件 查看货源
内容描述: 硅功率晶体管 [SILICON POWER TRANSISTORS]
分类和应用: 晶体晶体管开关局域网
文件页数/大小: 2 页 / 109 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号2N3054的Datasheet PDF文件第2页  
NPN 2N3054
SILICON POWER TRANSISTORS
The 2N3054 are NPN transistors mounted in TO-66 metal package with the collector
connected to the case .
They Designed for general purpose switching and amplifier applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
P
D
T
J
T
Stg
Ratings
Collector-Emitter Voltage (I
B
= 0)
Collector-Base Voltage (I
E
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Peak Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature range
Value
55
90
7
4
10
2
25
200
-65 to +200
Unit
V
V
V
A
A
W
°C
°C
@ T
case
= 25°
THERMAL CHARACTERISTICS
Symbol
R
thJ-c
Ratings
Thermal Resistance, Junction-case
Value
7
Unit
°C/ W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CEO
I
EBO
I
CEV
V
CEO
(*)
h
FE
(*)
V
CE(SAT)
(*)
V
BE
f
T
Ratings
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Cut-Off Current
Collector Emitter Breakdown
Voltage
DC Current Gain
Collector-Emitter saturation
Voltage
Base-Emitter Voltage
Transition Frequency
Test Condition(s)
Min
-
-
-
-
55
40
8
-
-
-
500
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
0.5
1
1
6
-
-
80
1
6
1.7
-
Unit
mA
V
CE
= 30 V, I
B
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 90V T
C
= 25°C
V
BE
= 1.5V T
C
= 150°C
I
C
=0.1 mA, I
B
=0
I
C
= 100 mA, V
CE
= 10 V
I
C
= 1 A, V
CE
= 2 V
I
C
= 500 mA, I
B
= 50 mA
I
C
= 3 A, I
B
= 1 A
I
C
= 500 mA, V
CE
= 4 V
I
C
= 200 mA, V
CE
=10 V
f= 1 MHz
V
-
V
V
MHz
(*) Pulse conditions : tp < 300
µs, δ
=2%.
COMSET SEMICONDUCTORS
1/2